FGH40T100SMD-F155 datasheet, igbt equivalent, ON Semiconductor

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Features and benefits

* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
* High Input Impedance
* Fast Switching
* These Devices are Pb−.

Application

Features
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
* High Inpu.

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features
* High Cu.

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